BS EN 60749-19-2003 半导体器件.机械和气候试验方法.模剪切强度
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【英文标准名称】:Semiconductordevices-Mechanicalandclimatictestmethods-Dieshearstrength
【原文标准名称】:半导体器件.机械和气候试验方法.模剪切强度
【标准号】:BSEN60749-19-2003
【标准状态】:作废
【国别】:英国
【发布日期】:2003-06-20
【实施或试行日期】:2003-06-20
【发布单位】:英国标准学会(GB-BSI)
【起草单位】:BSI
【标准类型】:()
【标准水平】:()
【中文主题词】:集成电路;电气工程;气候试验;外壳;试验;半导体;电子工程;环境试验;芯片;剪切强度;元部件;机械试验;材料强度;气候;电学测量;电子设备及元件;半导体器件
【英文主题词】:Chips;Climate;Climatictests;Components;Electricalengineering;Electricalmeasurement;Electronicengineering;Electronicequipmentandcomponents;Enclosures;Environmentaltesting;Integratedcircuits;Mechanicaltesting;Semiconductordevices;Semiconductors;Shearstrength;Strengthofmaterials;Testing
【摘要】:ThispartofIEC60749determines(seenote)theintegrityofmaterialsandproceduresusedtoattachsemiconductordietopackageheadersorothersubstrates(forthepurposeofthistestmethod,theterm"semiconductordie"shouldbetakentoincludepassiveelements).Thistestmethodisgenerallyonlyapplicabletocavitypackagesorasaprocessmonitor.Itisnotapplicablefordieareasgreaterthan10mm.Itisalsonotapplicabletoflipchiptechnologyortoflexiblesubstrates.NOTEThisdeterminationisbasedonameasureoftheforceappliedtothedieortotheelement,and,ifafailureoccurs,thetypeoffailureresultingfromtheapplicationofforceandthevisualappearanceoftheresidualdieattachmediumandtheheader/substratemetallization.
【中国标准分类号】:L40
【国际标准分类号】:31_080_01
【页数】:10P.;A4
【正文语种】:英语
【原文标准名称】:半导体器件.机械和气候试验方法.模剪切强度
【标准号】:BSEN60749-19-2003
【标准状态】:作废
【国别】:英国
【发布日期】:2003-06-20
【实施或试行日期】:2003-06-20
【发布单位】:英国标准学会(GB-BSI)
【起草单位】:BSI
【标准类型】:()
【标准水平】:()
【中文主题词】:集成电路;电气工程;气候试验;外壳;试验;半导体;电子工程;环境试验;芯片;剪切强度;元部件;机械试验;材料强度;气候;电学测量;电子设备及元件;半导体器件
【英文主题词】:Chips;Climate;Climatictests;Components;Electricalengineering;Electricalmeasurement;Electronicengineering;Electronicequipmentandcomponents;Enclosures;Environmentaltesting;Integratedcircuits;Mechanicaltesting;Semiconductordevices;Semiconductors;Shearstrength;Strengthofmaterials;Testing
【摘要】:ThispartofIEC60749determines(seenote)theintegrityofmaterialsandproceduresusedtoattachsemiconductordietopackageheadersorothersubstrates(forthepurposeofthistestmethod,theterm"semiconductordie"shouldbetakentoincludepassiveelements).Thistestmethodisgenerallyonlyapplicabletocavitypackagesorasaprocessmonitor.Itisnotapplicablefordieareasgreaterthan10mm.Itisalsonotapplicabletoflipchiptechnologyortoflexiblesubstrates.NOTEThisdeterminationisbasedonameasureoftheforceappliedtothedieortotheelement,and,ifafailureoccurs,thetypeoffailureresultingfromtheapplicationofforceandthevisualappearanceoftheresidualdieattachmediumandtheheader/substratemetallization.
【中国标准分类号】:L40
【国际标准分类号】:31_080_01
【页数】:10P.;A4
【正文语种】:英语
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